Toyoda Gosei has achieved state-of-the-art high current operation1 in a vertical GaN power semiconductor developed using gallium nitride (GaN), a main material in blue LEDs.
Power semiconductors are widely used in power converters such as power sources and adaptors for electronic devices. However, simultaneous achievement of both high breakdown voltage and low loss (low conduction loss and switching loss) at high levels has been difficult with conventional silicon due to its material properties.
In its power semiconductors, Toyoda Gosei uses GaN, which has material properties of high breakdown voltage and low loss, and employs a vertical device structure in which electrical current flows vertically from or to a substrate. These changes have enabled a GaN power transistor chip with operating current of over 50A, highest ever reported for vertical GaN transistors, and high-frequency (several megahertz) operation.